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2020-04-01 12:00 來源：京東作者：京東

Springer手冊精選系列·晶體生長手冊（第1冊）：晶體生長及缺陷形成概論（影印版）

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內(nèi)容簡介:　　《Springer手冊精選系列·晶體生長手冊（第1冊）：晶體生長及缺陷形成概論（影印版）》介紹基礎(chǔ)理論：生長和表征技術(shù)綜述，表面成核工藝，溶液生長晶體的形態(tài)，生長過程中成核的層錯(cuò)，缺陷形成的形態(tài)。

作者簡介:　　Govindhan Dhanaraj is the Manager of Crystal Growth Technologies at Advanced Renewable Energy Company （ARC Energy） at Nashua， New Hampshire （USA） focusing on the growth of large size sapphire crystals for LED lighting applications， characterization and related crystal growth furnace development. He received his PhD from the Indian Institute of Science， Bangalore and his Master of Science from Anna University （India）. Immediately after his doctoral degree， Dr. Dhanaraj joined a National Laboratory， presently known as Rajaramanna Center for Advanced Technology in India， where he established an advanced Crystal Growth Laboratory for the growth of optical and laser crystals. Prior to joining ARC Energy， Dr. Dhanaraj served as a Research Professor at the Department of Materials Science and Engineering， Stony Brook University， NY， and also held a position of Research Assistant Professor at Hampton University， VA. During his 25 years of focused expertise in crystal growth research， he has developed optical， laser and semiconductor bulk crystals and SiC epitaxial films using solution， flux， Czochralski， Bridgeman， gel and vapor methods， and characterized them using x-ray topography， synchrotron topography， chemical etching and optical and atomic force microscopic techniques. He co-organized a symposium on Industrial Crystal Growth under the 17th American Conference on Crystal Growth and Epitaxy in conjunction with the 14th US Biennial Workshop on Organometallic Vapor Phase Epitaxy held at Lake Geneva， WIin 2009. Dr. Dhanaraj has delivered invited lectures and also served as session chairman in many crystal growth and materials science meetings. He has published over 100 papers and his research articles have attracted over 250 rich citations.

目錄:縮略語
PartA 晶體生長基礎(chǔ)及缺陷形成
1.晶體生長技術(shù)和表征：綜述
1.1 發(fā)展歷史
1.2 晶體生長理論
1.3 晶體生長技術(shù)
1.4 晶體缺陷及表征
參考文獻(xiàn)

2.表面成核
2.1 晶體環(huán)境相平衡
2.2 晶核形成及工作機(jī)理
2.3 成核率
2.4 飽和晶核密度
2.5 在同質(zhì)外延中的第二層成核
2.6 異質(zhì)外延中的聚集機(jī)理
2.7 表面活性劑對成核的影響
2.8 結(jié)論與展望
參考文獻(xiàn)

3.溶液中的晶體生長形態(tài)
3.1 相平衡
3.2 晶體的生長相理論
3.3 影響晶體特性的因素
3.4 表面結(jié)構(gòu)
3.5 晶體缺陷
3.6 成核動(dòng)力學(xué)——過飽和
3.7 溶劑
3.8 雜質(zhì)
3.9 其他因素
3.1 0晶體特性變化過程
3.1 1小結(jié)
3.A附錄
參考文獻(xiàn)

4.晶體生長過程中缺陷的生長及演變
4.1 綜述
4.2 包晶：
4.3 條紋和生長區(qū)
4.4 位錯(cuò)
4.5 孿晶
4.6 溶液中快速生長完整晶體
參考文獻(xiàn)

5.沒有約束條件下的單晶生長
5.1 背景
5.2 光滑和粗糙的接觸面：生長機(jī)理和形態(tài)學(xué)
5.3 表面微形貌
5.4 多面體材料晶體的生長形貌
5.5 內(nèi)部形態(tài)
5.6 完整單晶
參考文獻(xiàn)

6.熔體生長晶體期間缺陷的形成
6.1 綜述
6.2 點(diǎn)缺陷
6.3 位錯(cuò)
6.4 第二相粒子
6.5 面缺陷
6.6 孿晶
6.7 總結(jié)
參考文獻(xiàn)

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