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2020-05-14 15:59 來(lái)源：京東作者：京東

Springer手冊(cè)精選系列·晶體生長(zhǎng)手冊(cè)（第3冊(cè)）：熔液法晶體生長(zhǎng)技術(shù)（影印版）

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內(nèi)容簡(jiǎn)介:　　《Springer手冊(cè)精選系列·晶體生長(zhǎng)手冊(cè)（第3冊(cè)）：熔液法晶體生長(zhǎng)技術(shù)（影印版）》關(guān)注了溶液生長(zhǎng)法。在前兩章里討論了水熱生長(zhǎng)法的不同方面，隨后的三章介紹了非線性和激光晶體、KTP和KDP。通過在地球上和微重力環(huán)境下生長(zhǎng)的比較給出了重力對(duì)溶液生長(zhǎng)法的影響的知識(shí)。

作者簡(jiǎn)介:　　Govindhan Dhanaraj is the Manager of Crystal Growth Technologies at Advanced Renewable Energy Company （ARC Energy） at Nashua， New Hampshire （USA） focusing on the growth of large size sapphire crystals for LED lighting applications， characterization and related crystal growth furnace development. He received his PhD from the Indian Institute of Science， Bangalore and his Master of Science from Anna University （India）. Immediately after his doctoral degree， Dr. Dhanaraj joined a National Laboratory， presently known as Rajaramanna Center for Advanced Technology in India， where he established an advanced Crystal Growth Laboratory for the growth of optical and laser crystals. Prior to joining ARC Energy， Dr. Dhanaraj served as a Research Professor at the Department of Materials Science and Engineering， Stony Brook University， NY， and also held a position of Research Assistant Professor at Hampton University， VA. During his 25 years of focused expertise in crystal growth research， he has developed optical， laser and semiconductor bulk crystals and SiC epitaxial films using solution， flux， Czochralski， Bridgeman， gel and vapor methods， and characterized them using x-ray topography， synchrotron topography， chemical etching and optical and atomic force microscopic techniques. He co-organized a symposium on Industrial Crystal Growth under the 17th American Conference on Crystal Growth and Epitaxy in conjunction with the 14th US Biennial Workshop on Organometallic Vapor Phase Epitaxy held at Lake Geneva， WIin 2009. Dr. Dhanaraj has delivered invited lectures and also served as session chairman in many crystal growth and materials science meetings. He has published over 100 papers and his research articles have attracted over 250 rich citations.

目錄:縮略語(yǔ)
PartC 溶液法生長(zhǎng)晶體
17 地球微重力下從溶液中生長(zhǎng)體材料單晶
17.1 結(jié)晶：成核和生長(zhǎng)動(dòng)力學(xué)
17.2 低溫溶液的晶體生長(zhǎng)
17.3 更低溫度溶液的晶體生長(zhǎng)
17.4 硫酸三甘鈦晶體生長(zhǎng)：個(gè)案研究
17.5 微重力下硫酸三甘鈦晶體的溶液生長(zhǎng)
17.6 蛋白質(zhì)晶體生長(zhǎng)
17.7 結(jié)語(yǔ)
參考文獻(xiàn)

18 水熱法大尺寸晶體生長(zhǎng)
18.1 水熱法晶體生長(zhǎng)的歷史
18.2 水熱法晶體生長(zhǎng)的熱力學(xué)基礎(chǔ)
18.3 水熱法晶體生長(zhǎng)的設(shè)備
18.4 部分晶體的水熱法生長(zhǎng)
18.5 精細(xì)晶體的水熱法生長(zhǎng)
18.6 水熱法生長(zhǎng)納米晶體
18.7 結(jié)語(yǔ)
18.A附錄
參考文獻(xiàn)

19 水熱法與氨熱法生長(zhǎng)ZnO和GaN
19.1 水熱法與氨熱法生長(zhǎng)大晶體綜述
19.2 低缺陷大晶體的生長(zhǎng)要求
19.3 物理與數(shù)學(xué)模型
19.4 過程模擬
19.5 水熱法生長(zhǎng)ZnO晶體
19.6 氨熱法生長(zhǎng)GaN
19.7 結(jié)論
參考文獻(xiàn)

20 KTP型非線性光學(xué)晶體的化學(xué)計(jì)量比和疇結(jié)構(gòu)
20.1 背景
20.2 化學(xué)計(jì)量比與鐵電相轉(zhuǎn)變
20.3 生長(zhǎng)引起的鐵電疇
20.4 人造疇結(jié)構(gòu)
20.5 非線性光學(xué)晶體
參考文獻(xiàn)

21 高溫溶液生長(zhǎng)：用于激光和非線性光學(xué)的晶體
21.1 基礎(chǔ)
21.2 高溫溶液生長(zhǎng)
21.3 用TSSG法生長(zhǎng)激光體材料和NLO單晶
21.4 液相外延：激光和NLO材料的外延膜的生長(zhǎng)
參考文獻(xiàn)

22 KDP及同類晶體的生長(zhǎng)與表征
22.1 背景
22.2 結(jié)晶機(jī)制和動(dòng)力學(xué)
22.3 單晶的生長(zhǎng)技術(shù)
22.4 生長(zhǎng)條件對(duì)晶體缺陷的影響
22.5 晶體質(zhì)量檢測(cè)
參考文獻(xiàn)

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